N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

文件：74.38 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-Channel 2.5-V (G-S) MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：208.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 2.5-V (G-S) MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：208.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：476.81 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：476.61 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：1.00496 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Converters • Boost Converters • Load Switch

文件：223.59 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

文件：74.38 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：476.16 Kbytes 页数：9 Pages

VBSEMI

微碧半导体