SI3442DV

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description\nThese N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low vo; ■ 4.1 A, 20 V. \n   RDS(ON) = 0.06 W @ VGS = 4.5 V\n   RDS(ON) = 0.075 W @ VGS =2.7 V.\n■ Proprietary SuperSOTTM-6 package design using copper\n   lead frame for superior thermal and electrical capabilities.\n■ High density cell design for extremely low RDS(ON).\n■ Exceptional on-resistance and maxi;

SI3442DV

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlow

Si3442DV

20-V (D-S) Single

SI3442DV-T1-E3

N-Channel 30 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

SI3442DV-T1-GE3

N-Channel 30 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching