Single P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. Features • –4 A, –30 V. RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 75 mΩ @ VGS = –4.5 V • Low

文件：85.23 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：450.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：451.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

双P沟道逻辑电平PowerTrench® MOSFET

此P沟道逻辑电平MOSFET采用飞兆高级PowerTrench工艺生产。 它已针对电池的电源管理应用进行了优化。 •-4 A，-30 V。\n•RDS(ON) = 50 mΩ @ VGS = -10 V\n•RDS(ON) = 75 mΩ @ VGS = -4.5 V\n•低栅极变化\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

30-V (D-S) Single

Vishay

威世