首页 >SI3430DV-T1>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SI3430DV-T1 | N-Channel 100-V (D-S) MOSFET FEATURES •High-efficiencyPWMoptimized •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | |
SI3430DV-T1 | N-Channel 100-V (D-S) MOSFET | VishayVishay Siliconix 威世科技 | Vishay | |
N-Channel 100 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel 100-V (D-S) MOSFET FEATURES •High-efficiencyPWMoptimized •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 100 V (D-S) MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 100 V (D-S) MOSFET | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号:
SI3430DV-T1
- 功能描述:
MOSFET 100V 8A 2W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILICONIX |
22+ |
SOT-163 |
4897 |
绝对原装!现货热卖! |
询价 | ||
VISHAY |
23+ |
SOT23-6 |
5000 |
原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
30050 |
正品授权货源可靠 |
询价 | |||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Vishay(威世) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
Vishay(威世) |
2021/2022+ |
标准封装 |
6500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
Vishay(威世) |
22+ |
NA |
6500 |
原厂原装现货 |
询价 | ||
Vishay(威世) |
N/A |
33800 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
Vishay(威世) |
23+ |
N/A |
11800 |
询价 | |||
Vishay(威世) |
23+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
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