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SCTWA90N65G2V中文资料Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package数据手册ST规格书
SCTWA90N65G2V规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• High speed switching performance
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitances
技术参数
- 制造商编号
：SCTWA90N65G2V
- 生产厂家
：ST
- Package
：TO-247 long leads
- Grade
：Industrial
- VDSS_nom(V)
：650
- Drain Current (Dc)_max(A)
：90
- PTOT_max(W)
：390
- Qg_typ(nC)
：165
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST(意法半导体) |
20+ |
TO-247-LongLeads |
30 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
MINI |
22+ |
NA |
5000 |
只做原装,价格优惠,长期供货。 |
询价 | ||
MOTOROAL |
16+ |
SOT-153 |
10000 |
进口原装现货/价格优势! |
询价 | ||
ST(意法半导体) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
24+ |
DIP |
41 |
自己现货 |
询价 | |||
MOTOROAL |
17+ |
SOT-153 |
6200 |
100%原装正品现货 |
询价 | ||
ST/意法 |
22+ |
TO-247-4 |
3000 |
原装正品 |
询价 | ||
SC |
23+ |
DIP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
