丝印：SCT20N120；Package：H2PAK-2；Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

Features • Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch

文件：686.12 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT20N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package

文件：487.52 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT20N120；Package：H2PAK-2；Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

Features • Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch

文件：686.12 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT20N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package

文件：487.52 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Very high operating temperature capability

Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of

文件：499.56 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Easy to Parallel and Simple to Drive ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage DC/DC Converters ·Motor drives

文件：369.88 Kbytes 页数：2 Pages

ISC

无锡固电