SCT10N120AG芯片代码丝印对应型号-114ic电子网

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SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	型号：SCT10N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Swi 文件：238.62 Kbytes 页数：14 Pages	意法半导体	ETC
SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	型号：SCT10N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Swi 文件：238.62 Kbytes 页数：14 Pages	意法半导体	ETC

更多SCT10N120AG供应商更新时间2025-8-5 18:04:00