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RN1109MFV

Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts req

文件:468.41 Kbytes 页数:8 Pages

TOSHIBA

东芝

RN1110MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering as

文件:361.91 Kbytes 页数:6 Pages

TOSHIBA

东芝

RN1111

BUSSED RESISTOR NETWORK

Product Description CAMDs PRN101/111 Bussed Resistor Termination Networks offer high integration and performance in a miniature QSOP or SOIC package, which saves critical board area and provides manufacturing cost and reliability efficiencies. This part is well-suited as a general purpose replace

文件:51.09 Kbytes 页数:3 Pages

CALMIRCO

RN1111MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering as

文件:361.91 Kbytes 页数:6 Pages

TOSHIBA

东芝

RN1112FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever

文件:113.54 Kbytes 页数:3 Pages

TOSHIBA

东芝

RN1113FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever

文件:113.54 Kbytes 页数:3 Pages

TOSHIBA

东芝

RN1114MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV

文件:786.43 Kbytes 页数:8 Pages

TOSHIBA

东芝

RN1115MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV

文件:786.43 Kbytes 页数:8 Pages

TOSHIBA

东芝

RN1116MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV

文件:786.43 Kbytes 页数:8 Pages

TOSHIBA

东芝

RN1117MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV

文件:786.43 Kbytes 页数:8 Pages

TOSHIBA

东芝

晶体管资料

  • 型号:

    RN1001

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+R

  • 性质:

    开关管 (S)

  • 封装形式:

    直插封装

  • 极限工作电压:

    50V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    AA1L3M,DTC143ES,UN421L,2SC4363,

  • 最大耗散功率:

    0.4W

  • 放大倍数:

  • 图片代号:

    A-20

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.4

技术参数

  • IF:

    1.5A

  • IFSM:

    60A

  • VF max.(25℃):

    0.92V

  • trr1(IF:

    IRP=1

  • IR:

    20μA

  • H・IR:

    3.0mA

  • 热阻:

    15℃/W

  • 机电(车载)产品分类:

    NO

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更多RN供应商 更新时间2026-1-27 15:15:00