TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = 800mA) • With built-in bias resistors. • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2221~2227

文件：310.5 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = 800mA) • With built-in bias resistors. • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2221~2227

文件：310.5 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = 800mA) • With built-in bias resistors. • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2221~2227

文件：310.5 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

For Muting and Switching Applications 1. High emitter-base voltage : VEBO= 25v (min) 2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma) 3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA) 4. With built-in bias resistors 5. Simplify circuit design 6. Reduce a quantity of part

文件：86.89 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

For Muting and Switching Applications 1. High emitter-base voltage : VEBO= 25v (min) 2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma) 3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA) 4. With built-in bias resistors 5. Simplify circuit design 6. Reduce a quantity of part

文件：86.89 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

For Muting and Switching Applications 1. High emitter-base voltage : VEBO= 25v (min) 2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma) 3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA) 4. With built-in bias resistors 5. Simplify circuit design 6. Reduce a quantity of part

文件：86.89 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

For Muting and Switching Applications 1. High emitter-base voltage : VEBO= 25v (min) 2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma) 3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA) 4. With built-in bias resistors 5. Simplify circuit design 6. Reduce a quantity of part

文件：86.89 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN2301 to RN2306

文件：462.19 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN2301 to RN2306

文件：462.19 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN2301 to RN2306

文件：462.19 Kbytes 页数：8 Pages

TOSHIBA

东芝