丝印：QC；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

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丝印：QD；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

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丝印：QE；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

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丝印：QF；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

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丝印：QG；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

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Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

For use in Muting and Switching Applications • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

文件：122.07 Kbytes 页数：3 Pages

TOSHIBA

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