Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.118Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.01 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：88.21 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：88.21 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：88.21 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：88.21 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 500V 40A 118Mohm To-3P

The RJK5020DPK is a Nch Single Power Mosfet 500V 40A 118Mohm To-3P.

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