isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：276.37 Kbytes 页数：2 Pages

ISC

无锡固电

500V - 2.4A - MOS FET High Speed Power Switching

文件：89.48 Kbytes 页数：7 Pages

RENESAS

瑞萨

500V - 2.4A - MOS FET High Speed Power Switching

文件：89.48 Kbytes 页数：7 Pages

RENESAS

瑞萨

500V - 2.4A - MOS FET High Speed Power Switching

文件：89.48 Kbytes 页数：7 Pages

RENESAS

瑞萨

Nch Single Power Mosfet 500V 2.4A 5000Mohm Mp-3A/To-252

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • Low on-state resistance RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25°C)\n• High speed switching\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日RJK5002DPD　规格书PDF159 KB数据手册2012年11月5日RJK5002DPD DatasheetPDF83 KB数据手册2012年8月8日功率MOS FET 功率MOS FET使用时的注意事项PDF1;

Renesas

瑞萨