Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

文件：122.43 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

文件：122.43 Kbytes 页数：9 Pages

RENESAS

瑞萨

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Small flat package ● PC = 1~2W (mounted on ceramic substrate) ● Complementary to RN60

文件：91.5 Kbytes 页数：3 Pages

TOSHIBA

东芝

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 600 to 1000 Volts CURRENT 50 Amperes

FEATURES *Low leakage *Low forward voltage *Surge overload rating : 450 amperes peak *Mounting position: Any *Ideal for printed circuit boards *High forward surge current capability *Superior thermal conductivity

文件：547.29 Kbytes 页数：5 Pages

RECTRON

丽正国际

Three-Phase External Noise Prevention Filter (For Immunity)

文件：1.67943 Mbytes 页数：5 Pages

TDK

东电化