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型号	下载订购	功能描述	制造商上传企业	LOGO
RF5L051K0CB4	文件：1.048079 Mbytes Page：12 Pages	1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit 文件：1.048079 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L051K4CB4	文件：1.15139 Mbytes Page：12 Pages	1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit 文件：1.15139 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L051K5CB4	文件：1.3451 Mbytes Page：12 Pages	1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit 文件：1.3451 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L052K0CB4	文件：1.324 Mbytes Page：12 Pages	2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • High breakdown voltage enable class E operation • On chip RC network enable high stability and ruggedness • Excellent th 文件：1.324 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L05500CB4	文件：534.17 Kbytes Page：12 Pages	500 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Description The RF5L05500CB4 is a 500 W, 50 V, high performance L 文件：534.17 Kbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L05750CF2	文件：1.63779 Mbytes Page：12 Pages	750 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features 1. Measured on 88-108 MHz wideband test board with two RF5L05750CF2 devices connected in push-pull. • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal st 文件：1.63779 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L05950CF2	文件：726.9 Kbytes Page：12 Pages	950 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull. • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal st 文件：726.9 Kbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L08350CB4	文件：1.18451 Mbytes Page：12 Pages	400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European Direct 文件：1.18451 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L08600CB4	文件：2.03193 Mbytes Page：12 Pages	650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia 文件：2.03193 Mbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
RF5L0912750CB4	文件：1.68668 Mbytes Page：13 Pages	750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia 文件：1.68668 Mbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

封装：
TO-252
包装数量：
2500
最小独立包装数量：
2500
包装形态：
Taping
RoHS：
Yes
Configuration：
Single
Package Code：
TO-252 (DPAK)
Package(JEITA)：
SC-63
Mounting Style：
Surface mount
Number of terminal：
3
VRM[V]：
200
Reverse Voltage VR[V]：
200
Average Rectified Forward Current IO[A]：
5
IFSM[A]：
40
Forward Voltage VF(Max.)[V]：
0.92
IF @ Forward Voltage [A]：
5
Reverse Current IR(Max.)[mA]：
0.001
VR @ Reverse Current [V]：
200
trr(Max.)[ns]：
25
IF @ trr [mA]：
500
IR @ trr [A]：
1
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150
Package Size [mm]：
6.6x10 (t=2.4)

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	RF5187TR7	RFMD	23+	SOIC-8	5000	原装正品,假一罚十	询价
深圳市粤骏腾电子科技有限公司	RF50107	WU	24+	NA	6399	大批量供应优势库存热卖	询价
谛辉(北京/上海/青岛 )电子科技有限公司	RF5111TR7	RF	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市澳亿芯电子科技有限公司	RF505B6STL	ROHM	25+	TO-252	10000	现货	询价
深圳市浩翊科技有限公司	RF5725TR7	RFMD	26+	(QFN-16)	12000	原装，正品	询价
深圳市斌能达电子科技有限公司	RF5110G	QORVO	24+	QFN-16	6000	全新原装深圳仓库现货有单必成	询价
深圳市赛芯源科技有限公司	RF5622TR7	RFMD	19+	QFN	16200	原装正品,现货特价	询价
华富测量(深圳)传感技术有限公司	RF5C60	HITACHI	2138+	QFP	8960	专营BGA,QFP原装现货,假一赔十	询价
深圳市力拓辉电子有限公司	RF5187	RFMD	22+	SOP8	5000	只做原装鄙视假货15118075546	询价
深圳市亿联芯电子科技有限公司	RF5501TR7	RFMD	2023+	QFN	2290	全新原装正品,优势价格	询价

更多RF5供应商更新时间2026-1-17 15:35:00

技术参数

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