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RF5L051K0CB4

1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit

文件:1.048079 Mbytes 页数:12 Pages

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RF5L051K4CB4

1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit

文件:1.15139 Mbytes 页数:12 Pages

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RF5L051K5CB4

1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit

文件:1.3451 Mbytes 页数:12 Pages

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RF5L052K0CB4

2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • High breakdown voltage enable class E operation • On chip RC network enable high stability and ruggedness • Excellent th

文件:1.324 Mbytes 页数:12 Pages

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RF5L05500CB4

500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Description The RF5L05500CB4 is a 500 W, 50 V, high performance L

文件:534.17 Kbytes 页数:12 Pages

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RF5L05750CF2

750 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1. Measured on 88-108 MHz wideband test board with two RF5L05750CF2 devices connected in push-pull. • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal st

文件:1.63779 Mbytes 页数:12 Pages

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RF5L05950CF2

950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull. • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal st

文件:726.9 Kbytes 页数:12 Pages

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RF5L08350CB4

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European Direct

文件:1.18451 Mbytes 页数:12 Pages

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RF5L08600CB4

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

文件:2.03193 Mbytes 页数:12 Pages

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RF5L0912750CB4

750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

文件:1.68668 Mbytes 页数:13 Pages

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技术参数

  • 封装:

    TO-252

  • 包装数量:

    2500

  • 最小独立包装数量:

    2500

  • 包装形态:

    Taping

  • RoHS:

    Yes

  • Configuration:

    Single

  • Package Code:

    TO-252 (DPAK)

  • Package(JEITA):

    SC-63

  • Mounting Style:

    Surface mount

  • Number of terminal:

    3

  • VRM[V]:

    200

  • Reverse Voltage VR[V]:

    200

  • Average Rectified Forward Current IO[A]:

    5

  • IFSM[A]:

    40

  • Forward Voltage VF(Max.)[V]:

    0.92

  • IF @ Forward Voltage [A]:

    5

  • Reverse Current IR(Max.)[mA]:

    0.001

  • VR @ Reverse Current [V]:

    200

  • trr(Max.)[ns]:

    25

  • IF @ trr [mA]:

    500

  • IR @ trr [A]:

    1

  • Storage Temperature (Min.)[°C]:

    -55

  • Storage Temperature (Max.)[°C]:

    150

  • Package Size [mm]:

    6.6x10 (t=2.4)

供应商型号品牌批号封装库存备注价格
RFMD
23+
SOIC-8
5000
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24+
NA
6399
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25+
标准封装
18000
原厂直接发货进口原装
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ROHM
25+
TO-252
10000
现货
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RFMD
26+
(QFN-16)
12000
原装,正品
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QORVO
24+
QFN-16
6000
全新原装深圳仓库现货有单必成
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RFMD
19+
QFN
16200
原装正品,现货特价
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HITACHI
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
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RFMD
22+
SOP8
5000
只做原装鄙视假货15118075546
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RFMD
2023+
QFN
2290
全新原装正品,优势价格
询价
更多RF5供应商 更新时间2026-1-17 15:35:00