500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Description The RF5L05500CB4 is a 500 W, 50 V, high performance L

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STMICROELECTRONICS

意法半导体

550 W, 50 V, HF to 250 MHz RF Power LDMOS transistor

The RF5L05500CB4 is a 500 W, 50 V, high performance LDMOS FET designed for multiple applications in the frequency range from HF to 500 MHz.\n\n • High efficiency and linear gain operations \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the European directive 2002/95/EC;

ST

意法半导体

QFN

QORVO/威讯联合

上传：深圳市恒科翔业电子有限公司

8x1x0.8

WALSIN

华新科技

上传：深圳市华康联电子科技有限公司

MSD

WALSIN

华新科技

上传：深圳市力拓辉电子有限公司