400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

The RF5L08350CB4 is a 400 W 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched for ease of use \n• Large positive and negative gate/source voltage range \n• In compliance with the European Directive 2002/95/EC;

ST

意法半导体

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European Direct

文件：1.18451 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Package：B4E；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：400 W, 50 V, 0.4 TO 1 GHZ RF POW

STMICROELECTRONICS

意法半导体

8x1x0.8

WALSIN

华新科技

上传：深圳市华康联电子科技有限公司

MSD

WALSIN

华新科技

上传：深圳市力拓辉电子有限公司