RF5L08350CB4中文资料400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor数据手册ST规格书

描述 Description

The RF5L08350CB4 is a 400 W 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

特性 Features

• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched for ease of use
• Large positive and negative gate/source voltage range
• In compliance with the European Directive 2002/95/EC

简介

RF5L08350CB4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的RF5L08350CB4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。