120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate/source voltage range • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Description The RF5L15120CB4 is a 120 W LDMOS FET,

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STMICROELECTRONICS

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120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz

The RF5L15120CB4 is a 120 W LDMOS FET, designed for broadband commercial communications, TV Broadcast, Avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate/source voltage range \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directive 2002/95/EC;

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WALSIN

华新科技

上传：深圳市华康联电子科技有限公司

MSD

WALSIN

华新科技

上传：深圳市力拓辉电子有限公司

WALSIN

华新科技

上传：深圳特瑞杰电子有限公司