| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3V GSM POWER AMPLIFIER Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ 文件：169.37 Kbytes 页数：12 Pages | RFMD 威讯联合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq 文件：233.55 Kbytes 页数：18 Pages | RFMD 威讯联合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq 文件：233.55 Kbytes 页数：18 Pages | RFMD 威讯联合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ 文件：169.37 Kbytes 页数：12 Pages | RFMD 威讯联合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件：171 Kbytes 页数：14 Pages | RFMD 威讯联合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件：171 Kbytes 页数：14 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件：274.69 Kbytes 页数：10 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件：275.03 Kbytes 页数：12 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件：275.03 Kbytes 页数：12 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件：274.69 Kbytes 页数：10 Pages | RFMD 威讯联合 | RFMD |
技术参数
- 封装：
TO-252
- 包装数量：
2500
- 最小独立包装数量：
2500
- 包装形态：
Taping
- RoHS：
Yes
- Configuration：
Single
- Package Code：
TO-252 (DPAK)
- Package(JEITA)：
SC-63
- Mounting Style：
Surface mount
- Number of terminal：
3
- VRM[V]：
200
- Reverse Voltage VR[V]：
200
- Average Rectified Forward Current IO[A]：
5
- IFSM[A]：
40
- Forward Voltage VF(Max.)[V]：
0.92
- IF @ Forward Voltage [A]：
5
- Reverse Current IR(Max.)[mA]：
0.001
- VR @ Reverse Current [V]：
200
- trr(Max.)[ns]：
25
- IF @ trr [mA]：
500
- IR @ trr [A]：
1
- Storage Temperature (Min.)[°C]：
-55
- Storage Temperature (Max.)[°C]：
150
- Package Size [mm]：
6.6x10 (t=2.4)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
23+ |
SOIC-8 |
5000 |
原装正品,假一罚十 |
询价 | ||
WU |
24+ |
NA |
6399 |
大批量供应优势库存热卖 |
询价 | ||
ROHM |
25+ |
TO-252 |
10000 |
现货 |
询价 | ||
QORVO |
24+ |
QFN-16 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
RFMD |
26+ |
(QFN-16) |
12000 |
原装，正品 |
询价 | ||
RFMD |
22+ |
SOP8 |
5000 |
只做原装鄙视假货15118075546 |
询价 | ||
RF |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
询价 | ||
RFMD |
19+ |
QFN |
16200 |
原装正品,现货特价 |
询价 | ||
RFMD |
21+ |
标准封装 |
27000 |
进口原装,优势专营品牌! |
询价 | ||
RFMD |
2023+ |
QFN |
2290 |
全新原装正品,优势价格 |
询价 |
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