型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
3V GSM POWER AMPLIFIER Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq 文件:233.55 Kbytes 页数:18 Pages | RFMD 威讯联合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ 文件:169.37 Kbytes 页数:12 Pages | RFMD 威讯联合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件:171 Kbytes 页数:14 Pages | RFMD 威讯联合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件:171 Kbytes 页数:14 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件:274.69 Kbytes 页数:10 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件:275.03 Kbytes 页数:12 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件:275.03 Kbytes 页数:12 Pages | RFMD 威讯联合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件:274.69 Kbytes 页数:10 Pages | RFMD 威讯联合 | RFMD | ||
3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Product Description The RF5122 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojuncti 文件:1.18115 Mbytes 页数:11 Pages | RFMD 威讯联合 | RFMD | ||
3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Product Description The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojuncti 文件:261.32 Kbytes 页数:12 Pages | RFMD 威讯联合 | RFMD |
技术参数
- 封装:
TO-252
- 包装数量:
2500
- 最小独立包装数量:
2500
- 包装形态:
Taping
- RoHS:
Yes
- Configuration:
Single
- Package Code:
TO-252 (DPAK)
- Package(JEITA):
SC-63
- Mounting Style:
Surface mount
- Number of terminal:
3
- VRM[V]:
200
- Reverse Voltage VR[V]:
200
- Average Rectified Forward Current IO[A]:
5
- IFSM[A]:
40
- Forward Voltage VF(Max.)[V]:
0.92
- IF @ Forward Voltage [A]:
5
- Reverse Current IR(Max.)[mA]:
0.001
- VR @ Reverse Current [V]:
200
- trr(Max.)[ns]:
25
- IF @ trr [mA]:
500
- IR @ trr [A]:
1
- Storage Temperature (Min.)[°C]:
-55
- Storage Temperature (Max.)[°C]:
150
- Package Size [mm]:
6.6x10 (t=2.4)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ENTROPIC |
13+ |
2862 |
原装分销 |
询价 | |||
1605 |
正品原装--自家现货-实单可谈 |
询价 | |||||
RIGOH |
25+ |
QFP+144 |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
RICOH |
09+ |
SOP |
5500 |
原装无铅,优势热卖 |
询价 | ||
RFMD |
10+ |
MLP3*3 |
6000 |
原装现货价格有优势量多可发货 |
询价 | ||
RF |
345 |
SMD |
1265 |
全新原装现货100真实自己公司 |
询价 | ||
N/A |
25+ |
QFP |
2500 |
强调现货,随时查询! |
询价 | ||
ROHM |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
询价 | ||
RF |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
询价 | ||
RFMD |
23+ |
SOIC-8 |
5000 |
原装正品,假一罚十 |
询价 |
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