RF5110G中文资料威讯联合数据手册PDF规格书

Product Description

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.

Features

Single 2.7V to 4.8V Supply Volt age

+36dBm Output Power at 3.5V

32dB Gain with Analog Gain Control

57 Efficiency

800MHz to 950MHz Operation

Supports GSM and E-GSM

Applications

3V GSM Cellular Handsets

3V Dual-Band/Triple-Band Hand sets

GPRS Compatible

Commercial and Consumer Systems

Portable Battery-Powered Equipment

FM Radio Applications:

150MHz/220MHz/

450MHz/865MHz/915MHz