2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • High breakdown voltage enable class E operation • On chip RC network enable high stability and ruggedness • Excellent th

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STMICROELECTRONICS

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2000 W, 50 V, HF to 500 MHz RF Power LDMOS transistor

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industr • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• High breakdown voltage enable class E operation \n• On chip RC network enable high stability and ruggedness \n• Excellent thermal st;

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WALSIN

华新科技

上传：深圳市华康联电子科技有限公司

MSD

WALSIN

华新科技

上传：深圳市力拓辉电子有限公司

WALSIN

华新科技

上传：深圳特瑞杰电子有限公司