1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance wit

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STMICROELECTRONICS

意法半导体

1.3 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor

The RF5L051K4CB4 is a 1400 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industr • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• On chip RC network enable high stability and ruggedness \n• Excellent thermal stability, low HCI drift \n• In compliance with the eu;

ST

意法半导体

RFMD
QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)