650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

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STMICROELECTRONICS

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650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

The RF5L08600CB4 is a 650 W, 50 V high performance, internally matched LDMOS FETs, designed for multiple applications in the frequency range from 0.4 to 1 GHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched pair transistors in push-pull configuration \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

ST

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WALSIN

华新科技

上传：深圳市华康联电子科技有限公司

MSD

WALSIN

华新科技

上传：深圳市力拓辉电子有限公司

WALSIN

华新科技

上传：深圳特瑞杰电子有限公司