950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull. • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal st

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STMICROELECTRONICS

意法半导体

950 W，50 V，HF至500 MHz RF功率LDMOS晶体管

The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industri • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directive 2002/95/EC;

ST

意法半导体

QFN

RFMD

威讯联合

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RFMD

威讯联合

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SMD

QORVO/RFMD

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