Silicon MOSFET Power Transistor 30MHz,6W

DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

文件：204.78 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

文件：381.3 Kbytes 页数：8 Pages

MITSUBISHI

三菱电机

MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

文件：381.3 Kbytes 页数：8 Pages

MITSUBISHI

三菱电机

Silicon MOSFET Power Transistor, 520MHz, 8W

DESCRIPTION RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. FEATURES • High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz • High Efficiency: 50min. (520MHz) • Integrated gate protection diode APPLICATION For output stage of high

文件：152.77 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

Top Sensors RD-1 Remote Display

Short Description • Remote display with large digits display, suitable for wall mounting • 6-digit semi-alphanumeric red LED display (90 mm height) • 4 indicator LEDs • Aluminium profile case • IP30 Ingress Protection rating • Serial ports for transmission protocol • Configuration from PC v

文件：249.31 Kbytes 页数：2 Pages

ZEMIC

泽米克

Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode

Features • High breakdown voltage (VRRM=400V). • High reliability. • Easy to be mounted, good heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.

文件：236.95 Kbytes 页数：3 Pages

SANYO

三洋

Low VF ??High-Speed Switching Diode

Low VF • High-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.

文件：195.35 Kbytes 页数：3 Pages

SANYO

三洋

Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode

Ultrahigh-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. • Fast reverse recovery time.

文件：47.14 Kbytes 页数：3 Pages

SANYO

三洋

Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode

Features • High breakdown voltage (VRRM=600V). • High reliability. • Easy to be mounted, good heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.

文件：236.6 Kbytes 页数：3 Pages

SANYO

三洋

500 mW PLANAR TYPE SILICON ZENER DIODES

The RD2.0E to RD120E are zener diodes with an allowable dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure. FEATURES • The zener voltage series has a wide voltage range of 2 V to 120 V and is ideal for standardization. • The E24 series is employed for the

文件：346.09 Kbytes 页数：5 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司