丝印：RD；Package：SMA；5.0 to 440Volts 400Watts SMD TRANSIENT VOLTAGE SUPPRESSORS

文件：298.7 Kbytes 页数：5 Pages

ZSELEC

淄博圣诺

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

DESCRIPTION RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. FEATURES High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets.

文件：157.11 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

文件：369.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Low VF ??High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

文件：218.52 Kbytes 页数：3 Pages

SANYO

三洋

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

文件：369.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

文件：369.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile

文件：235.83 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz • High Efficiency: 6

文件：251.28 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70Typ @Vdd=

文件：2.69821 Mbytes 页数：15 Pages

MITSUBISHI

三菱电机

Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65typ. (175MHz) High Efficiency: 65typ. (520MHz) APPLICATION

文件：278.81 Kbytes 页数：9 Pages

MITSUBISHI

三菱电机