RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70Typ @Vdd=

文件：2.69821 Mbytes 页数：15 Pages

Mitsubishi

三菱电机

High Frequency Devices-Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2B

MITSUBISHI

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

文件：419.82 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

文件：209.9 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz • High Efficiency: 6

文件：251.28 Kbytes 页数：6 Pages

Mitsubishi

三菱电机