Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65typ. (175MHz) High Efficiency: 65typ. (520MHz) APPLICATION

文件：278.81 Kbytes 页数：9 Pages

Mitsubishi

三菱电机

Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High

文件：186.18 Kbytes 页数：8 Pages

Mitsubishi

三菱电机

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz • Hi

文件：287.12 Kbytes 页数：9 Pages

Mitsubishi

三菱电机

Low VF - High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V). • Fast reverse recovery time. • Low noise at the time of reverse recovery. • High reliability. • Easy to be mounted, good heat dissipation.

文件：236.44 Kbytes 页数：3 Pages

SANYO

三洋

Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V). • Fast reverse recovery time. • Low noise at the time of reverse recovery. • Low forward voltage (VF max=1.5V). • Halogen free compliance.

文件：220.31 Kbytes 页数：3 Pages

SANYO

三洋

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.5V) • Halogen free compliance

文件：371.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.5V) • Halogen free compliance

文件：371.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

DESCRIPTION RD04HMS2 is MOS FET type transistor specifically designed for VHF/UHF/890-950MHz RF power amplifiers applications. FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection

文件：1.16102 Mbytes 页数：20 Pages

Mitsubishi

三菱电机

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 5A, 400V, 50ns, TP/TP-FA Features • VRRM=400V • VF max=1.5V • trr=17ns(typ.)(IF=0.5A, IR=1A) • Halogen free compliance

文件：339.51 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Low VF ??High-Speed Switching Diode

Diffused Junction Silicon Diode Features • VRRM=400V • VF max=1.5V • trr=17ns(typ.)(IF=0.5A, IR=1A) • Halogen free compliance

文件：268.95 Kbytes 页数：3 Pages

SANYO

三洋