| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RD | industrial controls and instrumentation | MERITEKMERITEK electronics corporation MERITEK电子MERITEK电子公司 | MERITEK | |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION RD00HHS1isaMOSFETtypetransistorspecificallydesignedforHFRFamplifiersapplications. FEATURES Highpowergain Pout>0.3W,Gp>19dB@Vdd=12.5V,f=30MHz APPLICATION ForoutputstageofhighpoweramplifiersinHFBandmobileradiosets. | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Low VF ??High-Speed Switching Diode DiffusedJunctionSiliconDiode Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. FEATURES Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz HighEfficiency:65typ. APPLICATION ForoutputstageofhighpoweramplifiersinVHF/UHFBandmobile | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS2isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES •Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz •HighEfficiency:6 | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W DESCRIPTION RD01MUS2BisaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES •HighpowergainandHighEfficiency. Pout1.6WTyp,Gp15dBTyp,70Typ@Vdd= | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. FEATURES Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz HighEfficiency:65typ.(175MHz) HighEfficiency:65typ.(520MHz) APPLICATION | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1BisaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. RD02MUS1BimprovedadrainsurgethanRD02MUS1byoptimizingMOSFETstructure. FEATURES Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES •Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •Hi | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Low VF - High-Speed Switching Diode DiffusedJunctionSiliconDiode Features •Highbreakdownvoltage(VRRM=600V). •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. •Highreliability. •Easytobemounted,goodheatdissipation. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode DiffusedJunctionSiliconDiode Features •Highbreakdownvoltage(VRRM=600V). •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. •Lowforwardvoltage(VFmax=1.5V). •Halogenfreecompliance. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA PlanarUltrafastRectifier Fasttrrtype,3A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lownoiseatthetimeofreverserecovery •Lowforwardvoltage(VFmax=1.5V) •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA PlanarUltrafastRectifier Fasttrrtype,3A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lownoiseatthetimeofreverserecovery •Lowforwardvoltage(VFmax=1.5V) •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2isMOSFETtypetransistorspecificallydesignedforVHF/UHF/890-950MHzRFpoweramplifiersapplications. FEATURES 1.HighPowergainandHighEfficiency Pout=5.0Wtyp.,Gp=14dBtyp. DrainEffi.=53typ. @Vds=12.5V,Pin=0.2W,f=950MHz 2.Integratedgateprotection | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
Low VF ??High-Speed Switching Diode DiffusedJunctionSiliconDiode Features •VRRM=400V •VFmax=1.5V •trr=17ns(typ.)(IF=0.5A,IR=1A) •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,5A,400V,50ns,TP/TP-FA Features •VRRM=400V •VFmax=1.5V •trr=17ns(typ.)(IF=0.5A,IR=1A) •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,5A,400V,50ns,TP/TP-FA Features •VRRM=400V •VFmax=1.5V •trr=17ns(typ.)(IF=0.5A,IR=1A) •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
RD
- 制造商：
BlockMaster Electronics
- 功能描述：
Roll
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOD323 |
15000 |
全新原装现货,价格优势 |
询价 | ||
TOSHIBAC |
22+ |
SOT-23 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
DIODESHOHS--- |
RE71A180850x254 |
SMAJ54A-13 0444-0 |
150000 |
全新原装现货 样品可售 |
询价 | ||
518 |
询价 | ||||||
TI/德州仪器 |
2048+ |
4DSBGA |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
TYOHM幸亚电阻 |
2023+ |
Axial2.4x6.5mm |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
TYOHM幸亚电阻 |
23+ |
Axial2.4x6.5mm |
4581 |
水星电子只做原装,支持一站式BOM配单。 |
询价 | ||
HellermannTyton |
22+ |
NA |
155 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Altech Corp. |
2022+ |
4996 |
全新原装 货期两周 |
询价 | |||
Altech Corporation |
2308+ |
467152 |
一级代理,原装正品,公司现货! |
询价 |
相关规格书
更多- RD0306T-H
- RD-0512D
- RD-0515D
- RD1/2WP-1.5K
- RD1/2WP-680K
- RD1/4WP-10R
- RD1/4WP-130R
- RD1/4WP-20K
- RD1/4WP-240K
- RD1/4WP-2K2
- RD1/4WP-2R2
- RD1/4WP-330R
- RD1/4WP-36K
- RD1/4WP-390R
- RD1/4WP-8K2
- RD1/4WP-910K
- RD1/4WPT-1K2
- RD100P
- RD10361
- RD10M
- RD10MW
- RD10SL
- RD10UM
- RD110S
- RD111C1121
- RD11P
- RD11SL
- RD11UM
- RD-1205D/P
- RD120S
- RD-1212D/P
- RD-125-1224
- RD-125-2412
- RD-125-4812
- RD-125A
- RD12M
- RD12S
- RD12UJ
- RD13M
- RD13P
- RD13SL
- RD13UM
- RD15K
- RD15M00000-759.25
- RD15S
相关库存
更多- RD-0505D
- RD-0512D/P
- RD-0515D/P
- RD1/2WP-6.8K
- RD1/2WP-75K
- RD1/4WP-130K
- RD1/4WP-150R
- RD1/4WP-22R
- RD1/4WP-27K
- RD1/4WP-2K7
- RD1/4WP-330K
- RD1/4WP-33K
- RD1/4WP-390K
- RD1/4WP-56R
- RD1/4WP-8M2
- RD1/4WP-91K
- RD100FM
- RD100S
- RD10L
- RD10M50
- RD10S
- RD10UJ
- RD110P
- RD1113112R
- RD11M
- RD11S
- RD11UJ
- RD-1205D
- RD120P
- RD-1212D
- RD-1215D
- RD-125-1248
- RD-125-2448
- RD-125-4824
- RD-125B
- RD12P
- RD12SL
- RD12UM
- RD13MW
- RD13S
- RD13UJ
- RD15CG101J500
- RD15M
- RD15P
- RD167
