RD

industrial controls and instrumentation

RD00HHS1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

DESCRIPTION RD00HHS1isaMOSFETtypetransistorspecificallydesignedforHFRFamplifiersapplications. FEATURES Highpowergain Pout>0.3W,Gp>19dB@Vdd=12.5V,f=30MHz APPLICATION ForoutputstageofhighpoweramplifiersinHFBandmobileradiosets.

RD0106T

Planar Ultrafast Rectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T

Low VF ??High-Speed Switching Diode

DiffusedJunctionSiliconDiode Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T-H

Planar Ultrafast Rectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T-TL-H

Planar Ultrafast Rectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD01MUS1

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. FEATURES Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz HighEfficiency:65typ. APPLICATION ForoutputstageofhighpoweramplifiersinVHF/UHFBandmobile

RD01MUS2

Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS2isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES •Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz •HighEfficiency:6

RD01MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

DESCRIPTION RD01MUS2BisaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES •HighpowergainandHighEfficiency. Pout1.6WTyp,Gp15dBTyp,70Typ@Vdd=

RD02MUS1

Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION RD02MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. FEATURES Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz HighEfficiency:65typ.(175MHz) HighEfficiency:65typ.(520MHz) APPLICATION