60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits • Logic-level compatible • Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm •

文件：273.44 Kbytes 页数：13 Pages

NEXPERIA

安世

General Purpose Rectifier (300-550 Amperes Average 4400 Volts)

Features: □ Standard and Reverse Polarities □ Flat Base, Flange Mounted Design Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Electrical Selection for Parallel and Series Operation □ High Voltage Creepage and Strike Paths □ Compression Bonded Encapsul

文件：646.6 Kbytes 页数：6 Pages

POWEREX

Phase Control SCR (300-350 Amperes 2400 Volts)

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti

文件：722.54 Kbytes 页数：4 Pages

POWEREX

2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR

文件：421.14 Kbytes 页数：18 Pages

ZETEX