N-channel TrenchMOS standard level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Profile 55 lower than SOT23 n Footprint 90 smaller than SOT23 n Low on-state resistance n Low threshold voltage n Leadless pack

文件：206.18 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：91.23 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

20 V, single P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFE

文件：701 Kbytes 页数：14 Pages

NEXPERIA

安世

AC/DC Switching Power Supplies

文件：175.25 Kbytes 页数：5 Pages

WALL