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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
PD20010-E	文件：240.84 Kbytes Page：13 Pages	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20010S-E	文件：240.84 Kbytes Page：13 Pages	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20010STR-E	文件：240.84 Kbytes Page：13 Pages	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20010TR-E	文件：240.84 Kbytes Page：13 Pages	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20012	文件：204.86 Kbytes Page：3 Pages	DIODE MODULE 200A/1200 to 1600V FEATURES IsolatedBase DualDiodesCathodeCommonandCascadedCircuit HighSurgeCapability ULRecognized,FileNo.E187184 TYPICALAPPLICATIONS *RectifiedForGeneralUse	NIEC Nihon Inter Electronics Corporation	NIEC
PD20015C	文件：155.35 Kbytes Page：9 Pages	RF power transistor, LdmoST family Description ThePD20015CisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto2GHz.PD20015Cboaststheexcellen	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20015-E	文件：352.27 Kbytes Page：16 Pages	RF power transistor, LdmoST family Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20015S-E	文件：352.27 Kbytes Page：16 Pages	RF power transistor, LdmoST family Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20015STR-E	文件：352.27 Kbytes Page：16 Pages	RF power transistor, LdmoST family Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
PD20015TR-E	文件：352.27 Kbytes Page：16 Pages	RF power transistor, LdmoST family Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

产品属性

产品编号：
PD20010S-E
制造商：
STMicroelectronics
类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 射频
包装：
托盘
晶体管类型：
LDMOS
频率：
2GHz
增益：
11dB
额定电流（安培）：
5A
功率 - 输出：
10W
封装/外壳：
PowerSO-10RF 裸露底部焊盘（2 条直引线）
供应商器件封装：
PowerSO-10RF（直引线）
描述：
TRANS RF N-CH FET POWERSO-10RF

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科雨电子有限公司	PD20010S-E	STM	1809+	SOP-10	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	PD20010S-E		22+	NA	3000	加我QQ或微信咨询更多详细信息,	询价
深圳市鹏顺微电子科技有限公司	PD20010S-E	STMicroelectronics	2022+	PowerSO-10RF(直引线)	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市向鸿伟业电子有限公司	PD20010S-E		2406+		650	诚信经营!进口原装!量大价优!	询价
深圳市金嘉锐电子有限公司	PD20010S-E	ST	2025+	PowerSO-10RF	16000	原装优势绝对有货	询价
深圳市河锋鑫科技有限公司	PD20010STRE	ST	22+	PowerSO10RF (Straight Lead)	9000	原厂渠道,现货配单	询价
深圳市博浩通科技有限公司	PD20010STR-E	STMicro.	23+	PowerSO-10RF	7750	全新原装优势	询价
深圳市振宏微科技有限公司	PD20010STR-E	ST	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价
深圳市诚利顺电子科技有限公司	PD20010STR-E	ST/意法	22+	N	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市创新迹电子有限公司	PD20010STR-E	ST/意法	22+	N	28000	原装现货只有原装.假一罚十	询价

更多PD2001供应商更新时间2021-9-14 10:50:00

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