PD20015-E

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea; • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC european directive;

PD20015-E

RF power transistor, LdmoST family

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

PD20015-E

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF PWR N-CH POWERSO-10RF

PD20015S-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

PD20015STR-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

PD20015TR-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell