PD20010STR-E分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PD20010STR-E属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的PD20010STR-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC European directive