RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF STR

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

200 V, 1 A hyperfast recovery rectifier

文件：251.25 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

200 V, 1 A hyperfast recovery rectifier

1. General description High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 200 V • Forward current IF ≤ 1 A • Hyp

文件：254.17 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司