DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：204.86 Kbytes 页数：3 Pages

NIEC

200A Avg 1200 1600 Volts

文件：153.57 Kbytes 页数：2 Pages

NIEC

200A Avg 1200 1600 Volts

文件：153.57 Kbytes 页数：2 Pages

NIEC

DIODE

文件：776.2 Kbytes 页数：2 Pages

NI

恩艾

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC european directive;

ST

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

ST

意法半导体

二极管/晶闸管模块-普通整流二极管

Kyocera

京瓷

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF STR

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF FORM

STMICROELECTRONICS

意法半导体