PD20015C分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PD20015C属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的PD20015C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology.

PD20015C’s superior linearity performance makes it an ideal solution for mobile application.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V

■ BeO free package

■ ESD protection

■ In compliance with the 2002/95/EC european directive