SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

文件：69.38 Kbytes 页数：2 Pages

edi

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：204.86 Kbytes 页数：3 Pages

NIEC

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

文件：155.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

文件：352.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

文件：352.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

文件：352.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体