丝印：PD2331I；Package：TSSOP；SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Single-Channel High-Side MOSFET Driver • Input Voltage: 3 V to 13 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input •

文件：755.11 Kbytes 页数：29 Pages

TI

德州仪器

丝印：PD2S；Package：WLCSP10；ESD protection for differential data lines

文件：3.48312 Mbytes 页数：19 Pages

NEXPERIA

安世

丝印：PD2S；Package：WLCSP10；ESD protection for differential data lines

文件：1.00234 Mbytes 页数：16 Pages

NEXPERIA

安世

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC european directive;

ST

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

ST

意法半导体

二极管/晶闸管模块-普通整流二极管

Kyocera

京瓷

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF STR

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF FORM

STMICROELECTRONICS

意法半导体