P10NM60规格书供应商报价无锡固电ISC-114ic电子网

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STD10NM60N	文件：907.61 Kbytes Page：17 Pages	N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STD10NM60N	文件：320.74 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-252(DPAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STD10NM60ND	文件：1.2278 Mbytes Page：19 Pages	N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode) Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF10NM60N	文件：907.61 Kbytes Page：17 Pages	N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF10NM60ND	文件：1.2278 Mbytes Page：19 Pages	N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode) Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF10NM60ND	文件：1.10791 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
STI10NM60N	文件：702.04 Kbytes Page：12 Pages	N-channel600V,0.53Ωtyp.,10AMDmesh™IIPowerMOSFETinI²PAKpackage Features •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh™technology.ThisrevolutionaryPower MOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP10NM60N	文件：1.10775 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
STP10NM60N	文件：300.92 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STP10NM60N	文件：907.61 Kbytes Page：17 Pages	N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP10NM60ND	文件：1.2278 Mbytes Page：19 Pages	N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode) Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP10NM60ND	文件：1.10772 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
STP10NM60ND	文件：300.89 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STU10NM60N	文件：290.58 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STU10NM60N	文件：907.61 Kbytes Page：17 Pages	N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市晨豪科技有限公司	P10NM60	ST/意法	23+	TO-220	89630	当天发货全新原装现货	询价
中科国际电子(深圳)有限公司	P10NM65N	ST	22+	TO-220	66900	原厂原装现货	询价
深圳市赛特兴科技有限公司	P10NM65N	ST	23+	TO-220	16900	正规渠道,只有原装!	询价
中科航电（深圳）电子集团有限公司	P10NM65N	ST		TO-220	36900	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市星佑电子有限公司	P10NM65N	ST	22+	TO-220	16900	支持样品原装现货提供技术支持!	询价
深圳市外芯人半导体有限公司	P10NM65N	ST	24+	TO-220	200000	原装进口正口,支持样品	询价
深圳市星宇佳科技有限公司	P10P20	国产			345000		询价
深圳市芯睿晨电子有限公司	P10-P55-D	Panduit Corp	23+	原厂封装	23630	只做原装只有原装现货实报	询价
深圳市德力诚信科技有限公司	P10-P55-L	PANDUIT	24+	con	100	现货常备产品原装可到京北通宇商城查价格https://www.jbchip.com/index	询价
贸泽芯城（深圳）电子科技有限公司	P10P6F6	ST/意法	23+	TO-220	56688	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多P10NM60供应商更新时间2024-9-21 8:10:00

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