丝印：10NM60ND；Package：DPAK；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

文件：1.2278 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. • Fast-recovery body diode \n• Low gate charge and input capacitance \n• Low on-resistance RDS(on) \n• 100% avalanche tested \n• High dv/dt ruggedness;

ST

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N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

文件：1.2278 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.10791 Mbytes 页数：10 Pages

VBSEMI

微碧半导体