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STD10NM60ND中文资料N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package数据手册ST规格书
STD10NM60ND规格书详情
描述 Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness
技术参数
- 制造商编号
：STD10NM60ND
- 生产厂家
：ST
- Package
：DPAK
- Packing Type
：Tape And Reel
- Marketing Status
：Active: Product is in volume production
- Unit Price (US$)*
：-
- Quantity
：-
- ECCN (EU)
：NEC
- ECCN (US)
：EAR99
- Country of Origin
：CHINA
- More info
：MORE INFO
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST |
25+23+ |
TO220 |
20983 |
绝对原装正品全新进口深圳现货 |
询价 | ||
STM |
26+ |
原厂封装 |
8900000 |
一级总代理商原厂原装大批量现货
一站式服务 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
询价 | ||
ST/意法 |
22+ |
TO-252 |
14100 |
原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
16900 |
公司只做原装，可来电咨询 |
询价 |
