NVB

型号：NCV431BVDMR2G；Package：Micro8；Programmable Precision References

TheTL431A,Bintegratedcircuitsarethree−terminal programmableshuntregulatordiodes.ThesemonolithicICvoltage referencesoperateasalowtemperaturecoefficientzenerwhichis programmablefromVrefto36Vwithtwoexternalresistors.These devicesexhibitawideoperatingcurrentra

NVB072N65S3

型号：NVB072N65S3；Package：D2PAK-3；MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A

Description SuperFETIIIMOSFETisonsemi’sbrand−newhighvoltage super−junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon−resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionlossprovidesuperi

NVB082N65S3F

型号：NVB082N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A

Description SUPERFET®IIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

NVB095N65S3F

型号：NVB095N65S3F；Package：D2PAK；MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

NVB110N65S3F

型号：NVB110N65S3F；Package：D2PAK；MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

Description SUPERFET®IIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

NVB150N65S3F

型号：NVB150N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A

Description SUPERFET®IIIMOSFETisonsemi’sbrand−newhighvoltage super−junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon−resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionloss,providesupe

NVB190N65S3F

型号：NVB190N65S3F；Package：D2PAK；MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK

Description SUPERFET®IIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

NVBG020120SC1

型号：NVBG020N120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=220nC) •LowEffectiveOutputCapacitance(typ.Coss=258pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve

NVBG040120SC1

型号：NVBG040N120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve

NVBGS6D5N15

型号：NVBGS6D5N15MC；Package：D2PAK7；MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant TypicalApplications •PowerTools,Battery