丝印：NVB；Package：Micro8；Programmable Precision References

The TL431A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These devices exhibit a wide operating current ra

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丝印：NVB072N65S3；Package：D2PAK-3；MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A

Description SuperFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superi

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丝印：NVB082N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

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丝印：NVB095N65S3F；Package：D2PAK；MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

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丝印：NVB110N65S3F；Package：D2PAK；MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

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丝印：NVB150N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A

Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide supe

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丝印：NVB190N65S3F；Package：D2PAK；MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

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丝印：NVBG020120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective Output Capacitance (typ. Coss = 258 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

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丝印：NVBG040120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

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丝印：NVBGS6D5N15；Package：D2PAK7；MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery

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