丝印：NVBG040120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

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