丝印：NVH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 页数：5 Pages

YINT

音特电子

丝印：NVH040N65S3F；Package：TO-247G03；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：277.77 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：NVH050N65S3F；Package：TO-247；MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：286.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：NVH082N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：300.33 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：NVH4L027N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：915.74 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NVH4L050N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：776.97 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NVH4L110N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：804.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NVHL025N65S3；Package：TO-247-3LD；MOSFET ??Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

文件：409.38 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：NVHL025N65S3；Package：TO-247-3LD；MOSFET – Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

文件：367.27 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：NVHL027N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET650 V, 75 A, 27.4 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：608.96 Kbytes 页数：11 Pages

ONSEMI

安森美半导体