丝印：NVH4L110N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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ONSEMI

安森美半导体

SUPERFET III MOSFET, 650V, 110mohm

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • Best in Class body diode\n• Lower over shoot during reverse recovery\n• Internal Rg\n• Low switching noise\n• Lower RDS(ON) / Same Packages\n• High System Reliability\n• Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS)\n• Ease of use for fast design-in\n• Internal Zener / 650 V BVdss\n• Low;

ONSEMI

安森美半导体

ON/安森美
SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

ON/安森美
SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

ON
TO-247

ON

上传：深圳权泰科技有限公司