Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • High Speed Switching and Low Capacitance\n• Coss = 80pF\n• 1200V rated\n• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A\n• 100% UIL Tested\n• Qualified for Automotive According to AEC−Q101;

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丝印：NVHL080N120SC1A；Package：TO-247；MOSFET - SiC Power, Single N-Channel

文件：297 Kbytes 页数：7 Pages

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MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A

文件：240.79 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

文件：322.54 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

文件：321.69 Kbytes 页数：8 Pages

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安森美半导体