NVH4L027N65S3F

丝印：NVH4L027N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

Features •UltraLowGateCharge&LowEffectiveOutputCapacitance •LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVH4L027N65S3F

SUPERFET III MOSFET, 650V, 27mohm; • Best in Class body diode\n• Lower over shoot during reverse recovery\n• Internal Rg\n• Low switching noise\n• Lower RDS(ON) / Same Packages\n• High System Reliability\n• Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS)\n• Ease of use for fast design-in\n• Internal Zener / 650 V BVdss\n• Low EMI & High Power Density\n;

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

NTH4L027N65S3F

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,75A,27.4m

NVH820S75L4SPC

ON/安森美
SSDC33

ON/安森美

NVH820S75L4SPC

ON/安森美
SSDC33

ON/安森美