功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，75 A，27.4mΩ，TO-247，4 引线

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 259 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode);

ONSEMI

安森美半导体

丝印：NTH4L027N65S3F；Package：TO-247-4LD；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

文件：532.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：915.74 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

ON/安森美
TO-247

ON/安森美

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ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司