丝印：NVH4L050N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：776.97 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NVH4L050N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：776.97 Kbytes 页数：10 Pages

ONSEMI

安森美半导体